| From academic research to industrial application | ||
| The Graphene Flagship so far has produced many exciting and valuable R&D results. One of the main obstacles for real uptake of graphene in the industry however is the lack of scalable processes for making large area, high quality layers and hetero-structures of graphene and other 2D layered materials, including functional device demo’s. Moreover, the interfaces in such structures are not well understood; this is critical as these interfaces and their stability during processing sequences will govern any device functioning and performance. | ||
| The 2D hetero-layer structure | ||
| 2Dfun aims at developing a graphene/MX2/dielectric platform (MX2 = transition metal dichalcolgenides) | ||
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| Manufacturing-compatible unit process steps | ||
| High-volume production compatible deposition techniques of MX2 on graphene as well as high-k dielectric layers (Al2O3, HfO2) on MX2 | ||
| - High-k dielectric growth is based on a conventional Atomic Layer Deposition (ALD) process | ||
| - We will investigate two novel routes for MX2 making | ||
| - plasma-enhanced sulphurization of metal or metal oxide layers deposited by ALD | ||
| - a direct ALD process with regular metal and chalcogen precursors | ||
| Surface functionalization | ||
| Functionalization of the graphene and MX2 surfaces is needed to create active sites for the subsequent growth processes, for which we will work with Self-Assembled Monolayers as well as some novel inorganic functionalization approaches. | ||
| Characterization | ||
| The resulting layers and full graphene/MX2/high-k layer structures will be thoroughly analyzed for their structural, chemical, optical and electrical characteristics. | ||
| 1. Detailed structure of 2D/2D (graphene/MX2) and 2D/3D (MX2/dielectric metal oxide) interfaces, | ||
| 2. Interface characteristics (charge transfer, energy distribution, gap state spectrum and band structure, stability). | ||
| Demo electrical devices | ||
| Demonstrate and characterize the first functional hybrid MOSFET devices made with High Volume Manufacturing compatible processes on this graphene/MX2/high-k platform | ||